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SMPS MOSFET
PD-94837
IRFIB5N65APBF
Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current
HEXFET(R) Power MOSFET
VDSS
650V
RDS(on) max
0.93
ID
5.1A
TO-220 Full-Pak
GDS
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
5.1 3.2 21 60 0.48 30 2.8 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns C
Typical SMPS Topologies
l l
Single Transistor Flyback Single Transistor Forward
Notes
through are on page 8
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IRFIB5N65APBF
Static @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units Conditions 650 --- --- V VGS = 0V, ID = 250A --- 0.67 --- V/C Reference to 25C, ID = 1mA --- --- 0.93 VGS = 10V, ID = 3.1.A 2.0 --- 4.0 V VDS = VGS, ID = 250A --- --- 25 VDS = 650V, VGS = 0V A --- --- 250 VDS = 520V, VGS = 0V, TJ = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V Min. 3.9 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 14 20 34 18 1417 177 7.0 1912 48 84 Max. Units Conditions --- S VDS = 50V, ID = 3.1A 48 ID = 5.2A 12 nC VDS = 400V 19 VGS = 10V, See Fig. 6 and 13 --- VDD = 325V --- ID = 5.2A ns --- RG = 9.1 --- RD = 62,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 520V, = 1.0MHz --- VGS = 0V, VDS = 0V to 520V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
325 5.2 6
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Typ.
--- --- Min. Typ. Max. Units
Max.
2.1 65
Units
C/W
Diode Characteristics
IS
ISM
VSD trr Qrr ton
Conditions D MOSFET symbol --- --- 5.2 showing the A G integral reverse --- --- 21 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 5.2A, VGS = 0V --- 493 739 ns TJ = 25C, IF = 5.2A --- 2.1 3.2 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFIB5N65APBF
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
10
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1
1
4.5V
0.1 0.1
20s PULSE WIDTH 4.5V TJ = 25 C
1 10 100
0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 5.2A
I D , Drain-to-Source Current (A)
2.5
10
2.0
TJ = 150 C
1.5
1
TJ = 25 C
1.0
0.5
0.1 4.0
V DS = 100V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFIB5N65APBF
2000
VGS , Gate-to-Source Voltage (V)
1600
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
20
ID = 5.2A VDS = 400V 520V VDS = 325V VDS = 130V
16
C, Capacitance (pF)
Ciss
1200
12
Coss
800
8
400
Crss
A
4
0 1 10 100 1000
0
FOR TEST CIRCUIT SEE FIGURE 13
0 10 20 30 40 50
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10us
ID , Drain Current (A)
10
10 100us
TJ = 150 C
1
1ms 1 10ms
TJ = 25 C V GS = 0 V
0.4 0.6 0.8 1.0 1.2
0.1 0.2
0.1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000 10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFIB5N65APBF
6.0
V DS VGS RG
RD
5.0
D.U.T.
+
ID , Drain Current (A)
4.0
-VDD
10V
3.0
Pulse Width 1 s Duty Factor 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
VDS 90%
25 50 75 100 125 150
1.0
0.0
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 10
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFIB5N65APBF
EAS , Single Pulse Avalanche Energy (mJ)
15V
800
TOP
600
VDS
L
DRIVER
BOTTOM
ID 2.3A 3.3A 5.2A
RG
20V
D.U.T
IAS tp
+ V - DD
A
400
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
200
0
25
Starting TJ , Junction Temperature ( C)
50
75
100
125
150
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS
QGD
V DSav , Avalanche Voltage (V)
800
VG
780
Charge
760
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
740
50K 12V .2F .3F
720
D.U.T. VGS
3mA
+ V - DS
700 0 1 2 3 4 5 6
A
I av , Avalanche Current (A)
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current
6
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IRFIB5N65APBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRFIB5N65APBF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E X AM P L E : T H I S I S AN IR F I8 4 0 G W I T H AS S E MB L Y L OT COD E 3 4 3 2 AS S E M B L E D O N W W 2 4 1 9 9 9 IN T H E AS S E M B L Y L IN E "K " IN T E R N AT IO N AL R E CT I F IE R L O GO AS S E M B L Y L O T COD E P AR T N U M B E R
IR F I8 4 0G 9 24 K 34 32
Note: "P" in assembly line position indicates "Lead-Free"
D AT E COD E Y E AR 9 = 1 9 9 9 WE E K 24 L IN E K
Notes:
Repetitive rating; pulse width limited by Starting TJ = 25C, L = 24mH
max. junction temperature. (See fig. 11)
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS t=60s, f=60Hz
RG = 25, IAS = 5.2A. (See Figure 12) TJ 150C
ISD 5.2A, di/dt 90A/s, VDD V(BR)DSS,
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03
8
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